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Publication Title | Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large-Scale Computing

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Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large-Scale Computing

Andrew G. Salinger∗, Roger P. Pawlowski, John N. Shadid, and Bart van Bloemen Waanders

Sandia National Laboratories†

February 9, 2004

Abstract

A computational analysis and optimization is presented for the chemical vapor deposition (CVD) of silicon in a horizontal rotating disk reactor. A three-dimensional reactor-scale model for the gas flow, heat transfer, and mass transfer in a CVD reactor is coupled to a sim- ple transport-limited surface reaction mechanism for the deposition of epitaxial silicon from trichlorosilane. The model is solved to steady- state for the deposition rate profile over the 8-inch silicon wafer using an unstructured grid finite element method and a fully coupled in- exact Newton method on parallel computers. Since a high degree of spatial uniformity in the deposition rate is desired, parameter contin- uation runs for 6 key operating parameters, including the inlet flow rate and the rotation rate of the substrate, were performed and their individual effects analyzed. Finally, optimization runs were performed that located operating conditions that predict non-uniformity as low as 0.1%.

∗Corresponding author (who in 1994 had the privilege of being a NATO Postdoctoral Fellow under Prof. Eigenberger at ICVT, University of Stuttgart): Sandia National Lab- oratories, P.O. Box 5800, MS-1111, Albuquerque, NM, 87185 USA. Tel:(505)845-3523. email:agsalin@sandia.gov.

†This work was funded by Sandia’s LDRD program and the Mathematical, Information, and Computational Sciences Program of the U.S. DOE Office of Science. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000

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