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Publication Title | FABRICATION METHOD FOR QUANTUM DOT SENSITIZED SOLAR CELL USING SUPERCRITICAL FLUID OR SUBCRITICAL FLUID AND QUANTUM DOT SENSITIZED SOLAR CELL PREPARED THEREBY

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Search Completed | Title | FABRICATION METHOD FOR QUANTUM DOT SENSITIZED SOLAR CELL USING SUPERCRITICAL FLUID OR SUBCRITICAL FLUID AND QUANTUM DOT SENSITIZED SOLAR CELL PREPARED THEREBY
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Text | FABRICATION METHOD FOR QUANTUM DOT SENSITIZED SOLAR CELL USING SUPERCRITICAL FLUID OR SUBCRITICAL FLUID AND QUANTUM DOT SENSITIZED SOLAR CELL PREPARED THEREBY | 001



(12)United States Patent Kim eta].

(10) Patent N0.: US 8,703,526 B2

(54)

(75)

(73) *

(21) (22) (65)

FABRICATIONMETHODFORQUANTUM DOT SENSITIZED SOLAR CELL USING SUPERCRITICAL FLUID OR SUBCRITICAL FLUIDAND QUANTUM DOT SENSITIZED SOLAR CELL PREPARED THEREBY

Inventors: JaehoonKim,Seoul(KR);Byoung Koun Min, Seoul (KR); Jae-Duck Kim,

Seoul (KR); Jong Min Park, Seoul (KR); Wonho Jang, Seoul (KR)

Assignee: Korea Institute of Science and Technology,Seoul(KR)

(56)

ReferencesCited U.S.PATENT DOCUMENTS

N oti'ce:

subject to anyd'1sc1a1'mer,thetermo ft1s patent is extended or adjusted under 35 U.S.C.154(b)by681days.

FOREIGN PATENT DOCUMENTS

KR 10-2008-0105908 A 12/2008 W0 WO2009/142677A2 11/2009

OTHER PUBLICATIONS

Mora-Sero et 21.,“Recomination in quantum dot sensitized solar cells,”Accounts ofChemical Research (2009) 42 (11): 1848-1857.

(Continued) PrimaryExaminer* SeahvoshNikmanesh

(74)Attorney,Agent,orFirm* Ladas& ParryLLP

(57) ABSTRACT

A methodoffabricatingatransparentelectrodeforuseina quantum dot sensitized solar cell, and a quantum dot sensi tized solar cell fabricated according to the method are pro vided.Accordingtothefabricationmethod,(S1)quantumdot precursorisintroducedintoahighpressurestoragevesseland a quantum dot precursor isdissolved using subcritical ?uid or supercritical?uid;(S2)thequantumdotprecursor?uidpre paredat(S1)istransportedtocontactWithaconductivethin layer substrate comprised of a metal oxide placed in a high pressure reaction vessel, thereby causing the quantum dot precursor to be adsorbed in the metal oxide thin layer; (S3) non-adsorbedquantumdotprecursor?uidof(S2)istrans portedandthusrecoveredtothehighpressurestoragevessel together With the subcritical ?uid or supercritical ?uid; and (S4)thesubcritical?uidorsupercritical?uidisremovedfrom the high pressure reaction vessel, and the quantum dot pre cursor, adsorbed at (S2), is reacted With a second element Whichconstitutesthequantumdotoracompoundcomprising the second element.

Appl.N0.: 12/969,246

Filed:

Dec.15,2010

PriorPublicationData US 2011/0303269A1 Dec. 15,2011

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Jun. 15,2010 (KR) ....................... 10-2010-0056568

(51) Int.Cl. H01L 31/0224

H01L 31/0352

H01L 31/18 (52) vs. C].

(2006.01) (2006.01) (2006.01)

ForeignApplicationPriorityData

USPC ..438/93;257/E31.033;257/E31.126; 977/948

(58) FieldofClassi?cationSearch None

See application ?le for complete search history.

M

15 10 105 10 BindingEnergy[eV]

ca311“ Cd34%

050 935 900 i 135 415 410 405 BindingEnergy[eV]

18 Claims, 12 Drawing Sheets

(45)DateofPatent:

Apr.22,2014

4,927,721 A 2005/0006714 A1 2008/0170982 A1*

5/1990 Gratzeleta1.

1/2005 Graetzeleta1.

7/2008 Zhang eta1. ..423/4473

US008703526B2

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fabrication-method-for-quantum-dot-sensitized-solar-cell-using-supercritical-fluid-or-subcritical-fluid-and-quantum-dot-sensitized-solar-cell-prepared-thereby
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